Report Description Table of Contents Introduction And Strategic Context The Global Wide Band Gap ( WBG ) Power Device Market is projected to grow at a CAGR of 22.4% , reaching an estimated USD 7.6 billion by 2030 , up from around USD 2.2 billion in 2024 , according to Strategic Market Research. Wide band gap semiconductors—such as silicon carbide ( SiC ) and gallium nitride ( GaN )—are unlocking a new era of power electronics. Compared to traditional silicon, WBG materials offer higher voltage tolerance, faster switching speeds, and significantly lower heat loss. This translates directly into higher power density and energy efficiency—two attributes now in high demand across electric vehicles (EVs), renewable energy systems, 5G base stations, and aerospace applications. The timing of this shift is no coincidence. Global decarbonization goals, energy efficiency mandates, and the mass electrification of transport are all putting pressure on the performance limits of legacy silicon. And while silicon isn't going away, WBG devices are fast becoming the go-to option where speed, size, and heat matter. Consider this: in the EV sector, SiC inverters are now essential for improving range and reducing battery size. In solar inverters and wind turbines, WBG devices are being integrated to cut conversion losses and support grid resilience. And in consumer electronics, GaN chargers are allowing for ultra-compact designs that charge faster with less heat. It’s no longer a question of “if” WBG will scale—it’s a question of “how fast.” From a stakeholder perspective, the ecosystem is rapidly evolving. OEMs like Tesla, BYD, and Toyota are vertically integrating SiC fabrication into their EV supply chains. Semiconductor giants like Infineon, Wolfspeed , STMicroelectronics, and ROHM are scaling dedicated WBG fabs. Meanwhile, foundry players, material suppliers, and even governments are investing heavily in capacity buildouts and research subsidies. The U.S., Japan, and the EU are treating WBG as strategic tech—partly due to its relevance in energy security and defense systems. What's more, investor interest in WBG has exploded. Over the past 24 months, venture capital has poured into GaN startups focused on data centers and mobile charging. Public-private partnerships are backing SiC initiatives in automotive clusters from Germany to Shanghai. Simply put: wide band gap semiconductors are no longer a frontier technology—they’re the engine behind the next generation of electrification. Market Segmentation And Forecast Scope The WBG power device market is segmented along four strategic dimensions — each reflecting how stakeholders optimize for efficiency, thermal performance, and application-specific demands. These include By Material Type, By Device Type, By End Use, and By Region. Here’s how these break down: By Material Type Silicon Carbide ( SiC ) Gallium Nitride ( GaN ) Silicon carbide dominates high-voltage applications, especially in electric vehicle powertrains, industrial drives, and grid infrastructure. In 2024, SiC accounts for around 61% of total market revenue. Its superior thermal conductivity and high voltage handling make it ideal for demanding environments like traction inverters and solar farms. GaN , on the other hand, is gaining rapid ground in lower-voltage, high-frequency use cases — think consumer fast chargers, data centers , and telecom. Its compact footprint and switching efficiency make it the preferred choice in space-constrained designs. GaN is expected to be the fastest-growing sub-segment through 2030, particularly in Asia and North America. By Device Type Power Modules Discrete Devices Bare Die/Wafer Power modules—integrated solutions combining several chips—are becoming critical in automotive and heavy-duty sectors. These modules help reduce parasitic losses and improve thermal performance. Discrete devices, meanwhile, still lead in cost-sensitive applications like power adapters and lighting, where integration is less critical. Interestingly, some fabs are now offering "bare die" to allow OEMs to embed WBG devices directly into custom modules, unlocking unique optimization pathways for EV platforms and aerospace systems. By End Use Electric Vehicles (EVs) Renewable Energy Industrial Motor Drives Consumer Electronics Data Centers & Telecom Aerospace & Defense EVs are the largest and most strategic segment today, with SiC -based inverters and onboard chargers becoming standard in mid-to-high-end electric cars. OEMs are aggressively re-engineering platforms to take full advantage of WBG efficiencies. Data centers and telecom are quickly adopting GaN for high-efficiency power supplies and rectifiers. Meanwhile, renewable energy is using both SiC and GaN to reduce power loss in solar and wind inverters. The blend of thermal resilience and compact form factor gives WBG devices a distinct edge here. By Region North America Europe Asia Pacific Latin America Middle East & Africa Asia Pacific leads in volume, thanks to EV production in China, consumer electronics in South Korea, and semiconductor manufacturing in Taiwan and Japan. But Europe is emerging as the innovation hub, especially with EU-backed SiC capacity expansions in Germany and France. The U.S. is rapidly catching up, fueled by Inflation Reduction Act incentives and domestic supply chain mandates. Scope Note : The forecast model includes revenue estimations across these segments for 2024 to 2030, factoring in direct sales of WBG devices, licensing, and fabless design revenue. It does not include passive components or silicon-based hybrids. Market Trends And Innovation Landscape The wide band gap device market is evolving fast — not just in materials or performance, but in how entire ecosystems are being restructured around SiC and GaN . Innovation is no longer limited to chip design. It now spans wafer production, packaging, thermal management, and system-level integration. SiC and GaN Are Moving from Niche to Platform-Level Technologies Five years ago, WBG devices were seen as exotic alternatives for engineers with tight power budgets. Today, they’re central to core platform design in electric vehicles, renewable power, and telecom infrastructure. OEMs are no longer “trying out” SiC or GaN — they’re building around them from day one. A good example? Tesla’s switch to SiC -based inverters wasn’t just a performance play — it changed the company's battery architecture. Likewise, GaN is becoming the default in 65W–300W chargers across major laptop and smartphone brands. Wafer Supply Bottlenecks Are Driving Upstream Investment The supply of SiC and GaN wafers remains a pain point, particularly for 6-inch and 8-inch substrates. Wafer costs represent nearly 45–60% of the final device price in some cases. To address this, companies like Wolfspeed , STMicroelectronics, and onsemi are vertically integrating — investing in raw substrate production and fab expansions. It’s no longer enough to design chips. Owning the wafer supply is now a competitive edge. Japan, the U.S., and the EU are backing local wafer foundries as a hedge against geopolitical risks in Taiwan and China. Packaging and Thermal Innovation Are Emerging as Differentiators Unlike traditional silicon, WBG materials can handle high temperatures — but only if the packaging keeps up. New packaging techniques like double-sided cooling, ceramic-based substrates, and lead-free sintering are becoming mainstream. Startups are entering with cooling solutions designed specifically for SiC modules in EV traction systems or for GaN in dense server racks. In fact, thermal bottlenecks, not semiconductor limitations, are now the primary design constraint in many GaN -based telecom systems. Software and Digital Twin Integration Are Gaining Ground As WBG devices become system-critical, developers are integrating them into digital design environments. Simulation tools from players like Keysight and Ansys now model WBG behavior at the system level — from power conversion to thermal spread. Some OEMs are using digital twins to optimize SiC power module layouts inside EVs or industrial robots. This isn't about virtual prototyping anymore — it’s about real-time design validation across thermal, electrical, and EMI domains. Strategic Collaborations Are Defining the Innovation Curve Several landmark partnerships over the past 24 months show how fragmented expertise is being stitched together: Infineon partnered with Volkswagen for SiC inverter optimization in next-gen EV platforms. Navitas and TDK teamed up to co-develop GaN -based power modules for telecom base stations. Bosch announced a multi-year plan to build a vertically integrated SiC fab in Germany, backed by EU subsidies. These aren’t just procurement deals — they’re deep co-design relationships that reshape how products are architected. Bottom line? This market’s innovation cycle is no longer led by the fabs alone. Materials scientists, thermal engineers, software modelers, and OEM platform designers all have a seat at the table now. Competitive Intelligence And Benchmarking This market isn’t crowded — but it’s fiercely strategic. The players in wide band gap semiconductors aren’t just chipmakers. They’re vertically integrated manufacturers, materials suppliers, and platform collaborators racing to secure design wins in EVs, renewables, and data infrastructure. Let’s break down how the top players are positioning themselves in this fast-consolidating landscape. Wolfspeed Wolfspeed is arguably the most vertically committed SiC supplier in the world. Formerly part of Cree, the company has reoriented its entire business around wide band gap semiconductors. Their Mohawk Valley Fab in New York is one of the world’s largest 200mm SiC facilities — a huge leap in wafer capacity. Wolfspeed’s edge lies in upstream control. They produce their own SiC substrates, which insulates them from wafer supply volatility. Automotive partnerships — especially with GM and STMicro — position them as a go-to source for EV platforms. STMicroelectronics STMicro is emerging as a serious SiC powerhouse, with a strong automotive focus. The company has secured multi-year design-ins with Tesla, Hyundai, and other major EV OEMs. Their joint venture with Soitec for SiC substrate development signals long-term material integration. Their advantage? Scalability + Automotive Certification. STMicro balances in-house wafer production with third-party sourcing, allowing for quicker ramp-ups. They’ve also earned the trust of Tier-1s due to consistent AEC-Q101 qualification for automotive-grade SiC components. Infineon Technologies Infineon is leveraging its legacy in power semiconductors to go deep into both SiC and GaN . Their CoolSiC ™ and CoolGaN ™ platforms are now standard in industrial drives, solar inverters, and fast chargers. Infineon’s strategy is ecosystem-centric. Rather than just selling devices, they offer full power design kits, simulation models, and thermal reference boards. They’re also building strong alliances with automotive suppliers to ensure seamless integration of SiC into existing EV control architectures. onsemi onsemi is scaling fast in SiC , thanks to its acquisitions and aggressive fab expansions. Its Hudson fab in New Hampshire is being retooled specifically for SiC. The company recently secured a major supply agreement with BMW for EV inverters. Their positioning is clear: low-defect, high-yield SiC at volume. They’ve taken a high-quality manufacturing stance, emphasizing defect density reduction in their substrates and epitaxy. Navitas Semiconductor Navitas is the poster child for commercial GaN . Unlike traditional players, Navitas is fabless — focusing entirely on GaN ICs for fast chargers, telecom rectifiers, and AI server power systems. Their integration of GaN power and digital control into a single chip is a key differentiator. Their strength is speed to market. Navitas routinely partners with OEMs in consumer and telecom sectors for co-designed power solutions, often beating legacy silicon vendors on turnaround time and cost-performance ratio. ROHM Semiconductor A quiet but formidable force in SiC , ROHM’s strength lies in automotive partnerships and discrete SiC devices. Their work with Toyota and Denso has pushed ROHM into the spotlight for high-efficiency EV powertrains. ROHM invests heavily in joint R&D, often working directly with OEMs to co-develop gate drivers and thermal packages for custom modules. Their focus on quality and traceability makes them a preferred choice for safety-critical systems. Competitive Dynamics at a Glance: Wolfspeed leads in vertical integration and wafer innovation. STMicro and Infineon are dominating Tier-1 automotive and industrial channels. Navitas owns the GaN innovation narrative in telecom and consumer electronics. onsemi is scaling fast with a focus on automotive-grade SiC. ROHM is a preferred partner in Japan for custom EV modules. This isn’t a tech arms race — it’s a trust race. The winners here aren’t just offering faster chips. They’re offering confidence — in yield, in performance, and in scale. Regional Landscape And Adoption Outlook Adoption of WBG power devices isn’t uniform — it tracks with regional priorities in electrification, energy security, and manufacturing autonomy. From EV hubs in Asia to power-hungry data centers in North America, every geography has its own push-and-pull factors shaping growth. Asia Pacific Asia Pacific leads in production volume and end-user adoption. China, Japan, South Korea, and Taiwan together account for the majority of WBG manufacturing and consumption today. China is the largest EV market in the world, and its domestic SiC production is scaling fast. Local players like StarPower , CRRC Times Electric , and Sanan IC are receiving government backing to reduce dependence on foreign wafers. Japan continues to invest heavily in both GaN and SiC , with firms like ROHM , Panasonic , and Mitsubishi Electric advancing high-performance devices for industrial drives and automotive platforms. South Korea is leaning into GaN for telecom and consumer electronics, supported by tech giants like Samsung and LG exploring GaN power ICs in chargers and laptops. What’s driving growth here? Cost reduction through scale, government incentives, and a robust downstream ecosystem of OEMs and fabs. That said, IP protection and materials sourcing remain challenges — especially in SiC substrate availability. North America North America is emerging as a WBG innovation and manufacturing base, particularly for SiC. Federal policies, reshoring efforts, and EV mandates are catalyzing rapid investment. The U.S. is seeing a boom in SiC capacity. Wolfspeed’s Mohawk Valley Fab , onsemi’s Hudson Fab , and Infineon’s planned expansion in Texas are examples of how seriously the U.S. is treating WBG as a strategic technology. Government support is strong, too. The CHIPS and Science Act and DoE energy efficiency initiatives are directing funding toward domestic WBG fabs and R&D. Use cases center around EVs, aerospace, and defense , with a growing push from data centers and cloud hyperscalers seeking GaN -based power supplies for AI workloads. To be honest, while the U.S. lags Asia in GaN adoption at the consumer level, it’s quickly becoming a leader in high-voltage SiC and military-grade WBG systems. Europe Europe is laser-focused on building a self-reliant WBG value chain , especially in SiC. Germany, France, and Italy are at the forefront of this effort. STMicroelectronics and Infineon are the anchors here — both expanding SiC production and forming local alliances with automakers like Volkswagen , Renault , and BMW . The EU’s Green Deal and carbon neutrality targets are accelerating demand for efficient power conversion — especially in EVs, rail transport, and renewable energy . Europe’s edge is standardization. The region’s unified regulations on vehicle electrification and industrial emissions are pushing OEMs to bake WBG into long-term platform roadmaps. However, supply chain risk remains. Europe is still heavily reliant on imports for raw wafers, which has sparked a wave of co-funded domestic wafer projects. Latin America Adoption in Latin America is early-stage but growing. Brazil and Mexico are leading regional demand, especially for industrial motor drives and solar inverters where energy efficiency regulations are tightening. A few notable developments: Brazil’s National Electricity Conservation Program is incentivizing high-efficiency industrial systems — a good match for SiC -based converters. Mexico , with its growing EV manufacturing exports to the U.S., is starting to adopt GaN and SiC components in auto parts supply chains. That said, lack of local packaging and testing capacity is a bottleneck. Most WBG components are imported as finished goods or sub-assemblies. Middle East & Africa (MEA) This region remains underpenetrated but opportunity-rich , especially in renewable energy and infrastructure . The UAE and Saudi Arabia are investing in solar megaprojects where SiC -based inverters improve grid efficiency and reliability. South Africa is piloting WBG components in mini-grid and micro-inverter deployments for off-grid electrification. In both cases, the focus is on durability and efficiency in harsh environments, a natural fit for SiC's high thermal stability. But a lack of trained engineers and WBG design know-how continues to slow broader rollout. Regional Summary: Asia Pacific : Volume leader, especially in EV and consumer. North America : Innovation and manufacturing scale-up for SiC. Europe : Strategic sovereignty push, regulation-driven adoption. Latin America : Efficiency-focused entry via renewables and auto exports. MEA : Renewable-led demand with infrastructure challenges. Bottom line: WBG growth will follow electrification intensity. And as EVs, renewables, and AI-scale infrastructure spread globally, no region will remain on the sidelines for long. End-User Dynamics And Use Case For WBG power devices, adoption isn’t just about performance. It’s about risk appetite, engineering bandwidth, and system-level thinking. That’s why end-user dynamics vary widely — from OEMs building entire electric platforms around SiC , to telecom companies cautiously integrating GaN into rectifiers one rack at a time. Let’s unpack what each group is doing with WBG tech, and what’s holding them back or pushing them forward. Automotive OEMs and Tier-1 Suppliers These are currently the largest and most committed WBG adopters — particularly for SiC . Use cases : Traction inverters, DC-DC converters, onboard chargers Why it matters : SiC improves EV range, reduces thermal loads, and shrinks powertrain size — all critical for next-gen EV platforms. OEMs like Tesla , BYD , Hyundai , and Lucid Motors have already made SiC a platform-level technology. In fact, some now design inverters around SiC capabilities from day one. Tier-1s like BorgWarner , ZF , and Denso are securing long-term SiC supply contracts to lock in roadmap stability. The tipping point ? SiC isn’t just about better performance anymore — it’s about competitive EV economics. Renewable Energy Providers Utility-scale solar and wind players are integrating WBG into inverters and power optimizers , especially in geographies with grid instability. Use cases : High-voltage inverters, battery storage interfaces Primary benefits : Lower switching losses, smaller heat sinks, better energy throughput That said, adoption here is gradual — driven more by operational cost savings than greenfield builds. EPCs and utilities are cautious, waiting for proven reliability over 5– 10 year lifecycles before scaling WBG at grid level. Industrial Automation & Motor Drive OEMs Factories are hungry for energy-efficient motor drives, and WBG devices (mostly SiC ) offer significant benefits in high-speed, high-torque applications. Use cases : Servo drives, robotics, HVAC compressors, conveyor systems Drivers : Lower heat generation, reduced cabinet space, better torque control The challenge? Industrial OEMs often deal with legacy systems and slower design cycles. But we’re seeing fast traction in new-build robotics plants , especially in Southeast Asia and Germany. Data Centers and Telecom Providers This is where GaN is shining — particularly for power supplies, rectifiers, and server SMPS (switch-mode power supplies) . Use cases : 48V-to-12V DC-DC converters in AI servers and 5G base stations Why it matters : GaN allows higher switching frequencies and smaller inductors, shrinking board sizes and improving efficiency. Hyperscalers like Amazon , Google , and Meta are quietly moving toward GaN -based server designs for edge and AI loads. Telecom majors are following suit in base station upgrades. The value prop here isn’t just about power. It’s about density, uptime, and thermal headroom in dense racks. Consumer Electronics OEMs Fast-charging adapters, gaming laptops, and even portable projectors are starting to use GaN . It's a small slice of the WBG market in dollar terms — but a huge one in volume. Use cases : USB-C chargers, LED drivers, power banks Adopters : Anker, Xiaomi, Lenovo, Apple (via ODMs) GaN’s ultra-compact form factor allows OEMs to offer faster charging without bigger bricks. While margins are tight, volume is massive — and competition is driving rapid innovation in power IC design. Use Case Highlight: EV Powertrain Re-architecture with SiC A European automotive OEM was redesigning its mid-range EV platform to extend driving range without increasing battery size. Initial simulations using silicon-based inverters offered limited gains. After switching to a SiC -based inverter design, the engineering team achieved: 8–10% efficiency improvement in power conversion 15% reduction in cooling system size 12kg reduction in overall system weight Beyond raw performance, the new SiC architecture allowed more aggressive regen braking and faster charging compatibility , improving both range and user experience. The redesign cut the system BOM cost by nearly $300 per vehicle over five years due to fewer thermal components and service calls. This is the kind of cascading impact that’s accelerating SiC adoption across OEMs — not just for luxury EVs, but now for mid-market platforms too. Bottom line: Every end-user segment wants efficiency. But the ones that are scaling fastest? They're not just buying chips — they’re reimagining systems around what WBG enables. And that’s where real market momentum is building. Recent Developments + Opportunities & Restraints Recent Developments (Last 2 Years) Wolfspeed opened its Mohawk Valley Fab in New York (2023), becoming the world’s first 200mm SiC facility to go fully operational, boosting substrate supply and vertical integration. Infineon launched its CoolSiC ™ MOSFET Generation 2 (2024), targeting higher current density and efficiency in industrial drives and solar inverters. STMicroelectronics and Zhejiang Jinko Electronics entered a multi-year SiC supply deal (2023), securing capacity for automotive and solar platforms. Navitas Semiconductor introduced its Gen-4 GaNFast ™ platform (2024), focusing on high-power server, telecom, and AI infrastructure workloads. onsemi expanded SiC production in the Czech Republic (2024) with a $500M investment to support EV and energy segments across Europe. Opportunities Automotive Electrification at Scale : SiC inverters are now central to mass-market EVs, unlocking demand from OEMs beyond luxury brands. Grid Decentralization & Renewables : WBG devices improve power quality and loss reduction in distributed energy systems, storage interfaces, and microgrids. AI-Driven Data Center Growth : GaN enables higher-efficiency, higher-density power delivery for AI servers running around the clock — critical for hyperscalers . Restraints Wafer Supply Constraints : Limited 6” and 8” SiC wafer production capacity is slowing adoption across automotive and industrial verticals. High Entry Cost for OEMs : Transitioning to WBG requires requalification, system redesign, and thermal management updates — a barrier for mid-tier players. 7.1. Report Coverage Table Report Attribute Details Forecast Period 2024 – 2030 Market Size Value in 2024 USD 2.2 Billion Revenue Forecast in 2030 USD 7.6 Billion Overall Growth Rate CAGR of 22.4% (2024 – 2030) Base Year for Estimation 2024 Historical Data 2019 – 2023 Unit USD Million, CAGR (2024 – 2030) Segmentation By Material Type, By Device Type, By End Use, By Geography By Material Type Silicon Carbide (SiC), Gallium Nitride (GaN) By Device Type Power Modules, Discrete Devices, Bare Die/Wafer By End Use Electric Vehicles, Renewable Energy, Industrial Motor Drives, Consumer Electronics, Data Centers & Telecom, Aerospace & Defense By Region North America, Europe, Asia-Pacific, Latin America, Middle East & Africa Country Scope U.S., China, Germany, Japan, South Korea, India, Brazil, UAE, etc. Market Drivers - Growing demand for high-efficiency power conversion - Electrification of transport and renewables - Thermal and size advantages over silicon Customization Option Available upon request Frequently Asked Question About This Report Q1: How big is the wide band gap power device market? A1: The global wide band gap power device market is valued at USD 2.2 billion in 2024, with significant growth expected over the forecast period. Q2: What is the CAGR for the wide band gap power device market during 2024–2030? A2: The market is projected to grow at a CAGR of 22.4% between 2024 and 2030. Q3: Who are the key players in the WBG power device space? A3: Major players include Wolfspeed, STMicroelectronics, Infineon Technologies, onsemi, Navitas Semiconductor, and ROHM. Q4: Which regions are leading the adoption of WBG devices? A4: Asia Pacific leads in volume, while North America and Europe are investing heavily in capacity and R&D innovation. Q5: What factors are driving market growth? A5: Key drivers include EV electrification, renewable energy demand, and the need for compact, energy-efficient power conversion solutions. Executive Summary Market Overview Market Attractiveness by Material Type, Device Type, End Use, and Region Strategic Insights from Key Executives (CXO Perspective) Historical Market Size and Future Projections (2019–2030) Summary of Market Segmentation by Material, Device Type, End Use, and Region Market Share Analysis Leading Players by Revenue and Market Share Market Share Analysis by Material Type, Device Type, and End Use Investment Opportunities in the WBG Power Device Market Key Developments and Innovations Mergers, Acquisitions, and Strategic Partnerships High-Growth Segments for Investment Market Introduction Definition and Scope of the Study Market Structure and Key Findings Overview of Top Investment Pockets Research Methodology Research Process Overview Primary and Secondary Research Approaches Market Size Estimation and Forecasting Techniques Market Dynamics Key Market Drivers Challenges and Restraints Impacting Growth Emerging Opportunities for Stakeholders Impact of Regulatory, Energy, and Tech Factors Technological Advances in WBG Power Electronics Global Wide Band Gap Power Device Market Analysis Historical Market Size and Volume (2019–2023) Market Size and Volume Forecasts (2024–2030) Market Analysis by Material Type Silicon Carbide ( SiC ) Gallium Nitride ( GaN ) Market Analysis by Device Type Power Modules Discrete Devices Bare Die/Wafer Market Analysis by End Use Electric Vehicles (EVs) Renewable Energy Industrial Motor Drives Consumer Electronics Data Centers & Telecom Aerospace & Defense Market Analysis by Region North America Europe Asia-Pacific Latin America Middle East & Africa Regional Market Analysis North America WBG Power Device Market Historical Market Size and Volume (2019–2023) Forecasts (2024–2030) Market Breakdown by Material, Device Type, and End Use Country-Level Breakdown: United States, Canada, Mexico Europe WBG Power Device Market Country-Level Breakdown: Germany, United Kingdom, France, Italy, Spain, Rest of Europe Asia-Pacific WBG Power Device Market Country-Level Breakdown: China, Japan, South Korea, India, Taiwan, Rest of Asia-Pacific Latin America WBG Power Device Market Country-Level Breakdown: Brazil, Mexico, Rest of Latin America Middle East & Africa WBG Power Device Market Country-Level Breakdown: GCC Countries, South Africa, Rest of Middle East & Africa Key Players and Competitive Analysis Wolfspeed STMicroelectronics Infineon Technologies onsemi Navitas Semiconductor ROHM Semiconductor Appendix Abbreviations and Terminologies Used in the Report References and Data Sources List of Tables Market Size by Material Type, Device Type, End Use, and Region (2024–2030) Regional Market Breakdown by Segment (2024–2030) List of Figures Market Drivers, Restraints, and Opportunities Regional Market Snapshot Competitive Landscape by Market Share Growth Strategies Adopted by Key Players Market Share by Material and Device Type (2024 vs. 2030)